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Size-dependent properties of sonochemically synthesized three-dimensional arrays of close-packed semiconducting AgBiS2 quantum dots

机译:声化学合成紧密堆积半导体AgBiS2量子点三维阵列的尺寸依赖性

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摘要

3D arrays of close-packed AgBiS2 quantum dots (QDs) in thin film form were synthesized for the first time using novel, convenient sonochemical approach. Structural, optical, and photoelectrical properties of the synthesized material were investigated with an emphasis on their dependence on crystal size. The sonochemically synthesized AgBiS2 colloidal crystals have an average QD radius of 4.2 nm, twice as small compared to the QD solid obtained without ultrasonic irradiation. The optical band gap energy of sonochemically synthesized AgBiS2 QD thin films of 1.40 eV is strongly blue-shifted in comparison to that of the macrocrystal (0.90 eV) and that of nanostructured films synthesized by conventional chemical route (1.10 eV). Upon annealing, E-g exhibits a red shift to 1.00 eV. Spectral dependence of stationary nonequilibrium conductivity of the 3D QD assemblies suggests that the thin films' photoconductivity is modulated by the intercrystalline barrier height decrease. Eg of the films calculated on the basis of photoconduction spectral response in the low-absorption region is 1.18 eV. Thermal band gap energy of the films is 1.10 eV, whereas both the variable range hopping conduction and thermionic emission mechanisms are predominant in the overall intercrystalline charge carrier transport through 3D QD assemblies.
机译:首次使用新颖、方便的声化学方法合成了薄膜形式的紧密堆积的 AgBiS2 量子点 (QD) 的 3D 阵列。研究了合成材料的结构、光学和光电特性,重点研究了它们对晶体尺寸的依赖性。声化学合成的AgBiS2胶体晶体的平均量子点半径为4.2 nm,是未通过超声波照射获得的量子点固体的两倍。声化学合成的1.40 eV的AgBiS2 QD薄膜的光学带隙能量与宏观晶体(0.90 eV)和常规化学途径合成的纳米结构薄膜(1.10 eV)相比具有强烈的蓝移。退火后,E-g 表现出红移至 1.00 eV。3D QD组件的固定非平衡电导率的光谱依赖性表明,薄膜的光电导率受到晶间势垒高度降低的调节。例如,根据低吸收区域的光传导光谱响应计算的薄膜为1.18 eV。薄膜的热带隙能量为1.10 eV,而可变范围跳跃传导和热离子发射机制在通过3D QD组件的整体晶间电荷载流子传输中占主导地位。

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