Preparation and properties of AlN/GaN quantum-well structure for quantum-cascade-laser application

摘要

AlN/GaN quantum-cascade stuructures which utilize piezo electric fields to inject electrons into second conduction subbands are prepared on sapphire substrate(OOO1). The quantum-cascade structure was confirmed by X-ray diffraction and TEM(Iransmission Electron Microscope). High quality cascade structure with good periodicity was prepared by growing the quantum-cascade structure on a flat GaN buffer layer.