The long and short of channel length

摘要

In this article, the powerful shift-and-ratio method proposed by Taur of IBM Corp. 1 is used to accurately determine effective channel length and mobility of deep-submicron devices. We show that the extracted low field mobility of ashort-channel device as a function of gate voltage is consistent with that of a long-channel device. Since in the BSIM3v3.2 industrial standard model a universal low field mobility is used for devices of various sizes, the shift-and-ratio method isparticularly suitable for determining accurate effective channel length that leads to a consistent mobility value.