Controlled barrier height InP Schottky diodes prepared by sulfur diffusion

摘要

Schottky barrier diodes with adjusted effective barrier heights have been obtained by diffusing sulfur intonhyphen;type InP to form a shallow highly doped layer at the surface. The necessary geometry and doping conditions for achieving lowered barrier heights are described and the experimental procedure for the diffusion of sulfur in InP is outlined. Data are presented on several devices having different surface layer impurity concentrations and effective barrier heights.