A lumped‐distributed small‐signal model for a class of transit‐time semiconductor devices

摘要

AbstractIn this paper a new lumped‐distributed small‐signal and noise model is presented for a class of transit‐time semiconductor devices including the IMPATT, BARITT, Transferred Electron and Space Charge Limited (SCL) diodes. The assumption of uniform carrier velocity is made and diffusion is neglected. The diode‐model is composed of lumped elements and dispersionless transmission lines, hence it is very suitable for computer‐aided circuit analysis. Broad agreement has been found between the experimental behaviour of devices and that of the