Disorder of a GaSUBx/SUBInSUB1-x/SUBAsSUBy/SUBPSUB1-y/SUB-InP quantum well by Zn diffusion

摘要

Data are presented showing for the first time that Zn diffusion into a GaxIn1-xAsyP1-y-InP quantum well and superlattice (of 100 Å thickness) completely disorders the quantum well and superlattice layers. The photoluminescence wavelength of the quantum well and the superlattice increased after Zn diffusion, which can be attributed to the In-Ga interdiffusion at the heterointerfaces as a result of the interchange mechanism between the interstitials and substitutional zinc atoms