phyphen;type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

摘要

A novel approach to producingphyphen;type ZnSe epitaxial layers is reported which involves nitrogen atom beam doping during molecular beam epitaxial growth. Net acceptor concentrations as large as 3.4times;1017cmminus;3have been measured in nitrogen atom beam doped ZnSe/GaAs heteroepitaxial layers which represents the highest acceptor concentration reported to date for ZnSe:N epitaxial material grown by molecular beam epitaxy. In addition, lighthyphen;emitting diodes based on ZnSe:N/ZnSe:Cl,phyphen;nhomojunctions have been found to exhibit dominant electroluminescence in the blue region of the visible spectrum at room temperature.