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Junction capacitance techniques for a deep centre showing photothermal ionization, with GaP:Ni dSUP9/SUPas an example

机译:Junction capacitance techniques for a deep centre showing photothermal ionization, with GaP:Ni dSUP9/SUPas an example

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摘要

A unified description is given for the kinetics of transitions, including capture and thermal and optical emission, for a deep centre with an excited state. Simplifications appropriate to various experimental situations, especially junction space-charge measurements, are presented. A procedure for constructing a configuration coordinate diagram for correlating results of different experiments is illustrated by the example of GaP:Ni d9with excitation and ionization.

著录项

  • 来源
    《semiconductor science and technology》 |1991年第4期|243-249|共页
  • 作者

    Xizhen Yang; J W Allen;

  • 作者单位

    Dept. of Phys., Beijing Normal Univ., China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

  • 入库时间 2024-01-25 20:07:23
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