Low temperature growth of GaAs{sub}(1-x-y)P{sub}yN{sub}x and In{sub}zGa{sub}(1-z)P{sub}(1-x)N{sub}x layers with high nitrogen composition and improvement of crystallinity by atomic hydrogen irradiation

摘要

Low temperature growth under atomic hydrogen irradiation was applied to the growth of III-V-N alloys with high nitrogen composition. In a growth of GaP{sub}(1-x)N{sub}x, nitrogen composition of 9 was obtained at a growth temperature of 250℃. High crystailinity was obtained in the growth of GaAs{sub}yP{sub}(1-x-y)N{sub}x and In{sub}zGa{sub}(1-z)P{sub}(1-x)N{sub}x layers with a nitrogen composition of 7. A two-dimensional growth mode was maintained during the growth and the crystallinity of the layers was improved by atomic hydrogen irradiation. It was found that low temperature growth under atomic hydrogen irradiation is effective for obtaining III-V-N layers with high nitrogen composition.