Enhancement of laserhyphen;induced defecthyphen;initiated Ga0emission from GaAs(110) surfaces by Br adsorption

摘要

High sensitivity measurements of Ga emission, produced by laser irradiation of fluences below the ablation threshold, from a Brhyphen;adsorbed GaAs(110) surface were carried out. It was found that bromine adsorption enhances Ga0emission: the amount of enhancement is linearly proportional to the amount of adsorbates but much smaller in the absolute value. The result is interpreted as a Brhyphen;induced weakening of the Gamdash;As bond on defect sites by Br adsorption.