Bias-tunable electron transport properties in a nanostructure with two parallel-magnetic barriers

摘要

In this paper, the spin-dependent electron transport is studied in detail in a nanostructure under an applied bias and two parallel-magnetic barriers. We find that the large spin polarization can be achieved in such a device, and the degree of electron-spin polarization strongly depends on the applied bias. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter. (C) 2007 Elsevier Ltd. All rights reserved.