Gravity effect on the properties of In_xGa_(1-x)Sb ternary alloys grown at the International Space Station - In_xGa_(1-x)Sb growth at the International Space Station

摘要

In_xGa_(1-x)Sb crystals were grown at the International Space Station (ISS) under microgravity (μG), and terrestrial conditions (1G) to understand the growth process of alloy semiconductors. The shape of the growth interface was nearly flat under μG, whereas under 1G, it was highly concave. The growth rate was higher under μG compared with 1G. The quality of the crystal was better under μG, as low etch pit density was observed compared with that of 1G condition. The suppressed convection under μG affected the dissolution and growth process of alloy semiconductor.