A singlepn-junction can be used as a switch, rectifier, light detector, solar cell or microwave diode. When twopn-junctions are fabricated in close proximity, they will interact causing transistor action to be realized. In this paper we propose an algorithm to solve the inverse problem of determining how to modify the doping concentration in apn-junction to achieve specified current-voltageI-Vcharacteristics. The solution algorithm of this inverse problem consists of two nested iteration procedures. The inner iteration is Gummels Method and is used to compute the potential and the carrier concentrations from which theI-Vcharacteristics may be obtained. Corrections to the doping function are then computed by the outer iteration. This iteration solves an ill-conditioned system and thus requires the use of regularization techniques. We give two numerical examples to illustrate its effectiveness.
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