A novel boronhyphen;diffusion process is described for the fabrication of highhyphen;efficiencyP+/Nsilicon solar cells. Over the range of diffusion parameters investigated this diffusion process results in a boronhyphen;rich surface layer and shallow junctions (0.15ndash;0.4 mgr;m) having two properties important to the formation of highhyphen;efficiency solar cellsmdash;relatively low values of sheet resistance (35ndash;140 OHgr;/laplac;) which facilitates the fronthyphen;surface gridhyphen;metal design and large resultant lifetimes approaching 60 mgr;s. The characteristics ofP+/Nsolar cells, fabricated using this diffusion process in singlehyphen;crystal (CZ) silicon wafers, having AM1 efficiencies ranging from 14 to 17percnt; are presented.
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