Deep submicron pattern transfer using high density plasma etching and nanochannel glass replica technology

摘要

Nanochannel glass (NCG)hyphen;based lithography has been used in conjunction with electron cyclotron resonance microwave plasma reactive ion etching (ECRhyphen;RIE) to demonstrate deep submicron features in HgCdTe alloys and InAs/GaSb heterostructures. NCGhyphen;based lithography is attractive as a massively parallel, low cost technology for nanometerhyphen;scale patterning. Samples patterned using thinhyphen;film metal replicas of NCG and methylhyphen;radicalhyphen;based ECRhyphen;RIE demonstrate a high degree of uniformity and fidelity with individual features having nearly vertical sidewalls and aspect ratios of up to 2 to 1. Dot arrays with features as small as 250 nm (and with packing densities of sim;1010/cm2) and antihyphen;dot arrays with features as small as 600 nm have been realized.