The effect of different methods of growth on the interface quality of extremely thin buried GexSi1minus;xfilms (dgr; layers) was studied by means ofinsituspot profile analysis lowhyphen;energy electron diffraction and extensive postgrowth xhyphen;ray characterization by measurements of crystal truncation rods and xhyphen;ray standing waves. In comparison to molecular beam epitaxy, solid phase epitaxy and surfactant mediated growth result in a significant reduction of Gendash;Si intermixing and interface roughness. copy;1996 American Institute of Physics.
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