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DOUBLE INJECTION IN EVAPORATED SILICON FILMS

机译:DOUBLE INJECTION IN EVAPORATED SILICON FILMS

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摘要

We have observed negative resistance behavior in evaporated silicon films at room temperature and at liquid nitrogen temperatures which we believe is due to double injection. This, to our knowledge, is the first reporting of double injection in silicon thin films, as well as the first reporting of an active device prepared from silicon thin films. Sample lengths in previous work have ranged from one hundred to several thousand microns. The films used in our work are 0.4 to 0.6 mgr; thick.

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  • 来源
    《applied physics letters》 |1967年第11期|313-315|共页
  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
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  • 入库时间 2024-01-25 20:06:12
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