Influence of thermal treatments on the electronic activity of dislocations in GaAs observed by cathodoluminescence

摘要

Wafers of undoped GaAs have been submitted to thermal treatments in various conditions of temperature, duration, environment and cooling rate. The electronic activity of dislocations is examined by cathodoluminescence in a scanning electron microscope. The results are that short treatments at 1050 degrees C give a fairly homogeneous luminescence all over the wafers, while defect contrasts are enhanced after 850 degrees C anneals.