Observation of intrinsic bistability in resonant tunneling diode modeling

摘要

Intrinsic bistability has been observed experimentally and attributed to the effect on the potential profile from stored charge in the quantum well through Poissonrsquo;s equation. This effect leads to two possible current states corresponding to a single voltage within the negative resistance region. In this letter a simulation method is presented which clearly shows bistability in the currenthyphen;voltage curve of a resonant tunneling diode. This method selfhyphen;consistently combines a Thomasndash;Fermi equilibrium model for the electron concentrations outside the doublehyphen;barrier structure with a quantum calculation for the concentration inside the structure.