Monte Carlo simulation of crystal growth from silicon melt

摘要

Monte Carlo simulations were carried out to study the rapid crystal growth rates of crystalline silicon in (100) and (111) orientations from pulsed-laser-induced melt. Growth rates were obtained above and below the surface-roughening transition temperature by means of a non-solid-on-solid model. The growth rates for the (100) direction were found to be much higher than those for (111). No roughening transition could be observed in (100) orientation and random growth was shown for this atomically rough surface.