Growth temperature dependence of the Si(001)/SiO2interface width

摘要

The growth temperature dependence of the thin thermally oxidized Si(001)/SiO2interface width was studied using synchrotron xhyphen;ray diffraction. Nine samples with oxide thickness of about 100 Aring; were studied, with growth temperatures ranging from 800 to 1200thinsp;deg;C. The oxides were prepared by rapid thermal oxidation. We found that interfacial roughness decreases linearly with increasing growth temperature, with a measured interface width of 2.84 Aring; for the sample grown at 800thinsp;deg;C, and 1.76 Aring; when grown at 1200thinsp;deg;C.