Reversibility and stability of tellurium alloys for optical data storage applications

摘要

We demonstrate for the first time that Te87Ge8Sn5films, which are amorphous as deposited, can be optically switched between the crystalline and amorphous states more than 106times. The measured reflectivity changed from 40percnt; to 60percnt; and the transmission changed from 3percnt; to 1.5percnt;, respectively, between the amorphous and crystalline states. The crystallization temperature of the cycled spots is ape;75thinsp;deg;C and these spots are observable after 20 weeks. It is found that the crystallization temperature of cycled spots is typically about 20thinsp;deg;C lower than that of the unwritten film. Increasing the Ge concentration leads to increased crystallization temperature and increased minimum crystallization time without affecting reversibility.