Electroless nickel plated contacts on porous silicon

摘要

We have presented the electroless nickel plating technique as a preferred method for making ohmic or rectifying contacts on porous silicon. Nickel, plated by this technique, penetrates the pores and forms contact on an effective area, about 4.5 times the actual area of the sample. Highhyphen;temperature annealing of the plated metal produced excellent ohmic contacts with porous silicon formed onnhyphen;type silicon. The properties of this contact are shown to be much superior to that of conventional evaporated and alloyed ohmic contacts made onphyphen;type porous silicon of identical characteristics. Contacts made under similar conditions by electroless nickel plating onphyphen;type porous silicon, on the other hand, showed good rectifying diode characteristics. The observed electrical properties of electroless nickel contacts are believed to be due to the presence of minute amounts of phosphorous with the plated metal. copy;1996 American Institute of Physics.