Effective activation of poly-Si film doped by SPC and ELA

摘要

Poly-Si TFT is studied intensively for applying to the active device that addressing FPD (Flat Panel Display) on the substrate such as glass. A formation of S/D with low resistance is important for the TFT. Effective activation of poly-Si film by SPC and/or ELA is described. By adopting the SPC technique for amorphous Si films, an enlargement of dendrite grains peculiar to the case of SPC reduces substantially the resistance even for the p-type film. Subsequent ELA realizes an effective activation by improving further the crystallinity. The effective activation by using SPC and/or ELA applying to the S/D as well as to the SiGe gate has an advantage in high performance Si TFT for FPD such as LCD (Liquid Crystal Display) or OLED (Organic Light Emitting Diode) display as well as in FD SOI (Fully Depleted Silicon on Insulator) transistors for Si LSI. The non-destructive optical analysis for the activation and the crystallinity using spectroscopic technique in UV and in IR is also promising a practical In-Process tool.