How do hot carriers degrade n-channel MOSFETs?

摘要

Explores the mechanisms of hot carrier degradation in n-MOSFETs. In addressing the problem of hot carrier degradation, we examine the carrier injection process, whereby electrons and holes are injected into the oxide from the channel. Next, we'll look at the processes responsible for creating damage. Third, the impact of the damage on the MOSFET's terminal characteristics is deternined. Then the damage process is modeled. Finally, we'll address ways to reduce hot carrier degradation