Electronic defect levels in selfhyphen;implanted cw laserhyphen;annealed silicon

摘要

Electronic defect levels in selfhyphen;implanted cw Arhyphen;laserhyphen;annealed silicon have been measured by deephyphen;level transient spectroscopy. The electron emission spectrum is dominated by two levels near the middle of the silicon forbidden energy band with activation energies of sim;0.49 and 0.56 eV. These levels can be spatially resolved in the depletion layer of Schottky diodes due to a more rapid decrease with distance in the density of the shallower level. In samples receiving a 450thinsp;deg;C furnace anneal (after laser irradiation) an additional level appears at 0.28 eV; the defect density is shown to decrease monotonically with depth into the silicon substrate.