Development activities at ASET for 100-nm lithography and beyond

摘要

The future lithographic technologies under development by ASET include X-ray proximity lithography (XPL), EUV lithography (EUVL), VUV lithography (VUVL) and electron beam lithography (EBL). XPL is aimed at the 100-nm technology node, VIW at 100-70 nm, and EUV at 70 nm and below. The biggest issue in XPL is the fabrication of precise masks. The issues in VUVL are the light source and material-related issues arising from photoabsorption. For EUVL, technologies for fabricating aspherical-mirror optics and multilayer masks are under development. In addition, several new technologies are being developed to boost the writing speed of electron beam systems. This paper reviews ASET's recent activities in these fields and discusses the future of lithography.