Selective area growth of GaAs/AlxGa1minus;xAs multilayer structures with molecular beam epitaxy using Si shadow masks

摘要

Selective growth of patterned GaAs and AlxGa1minus;xAs thinhyphen;film structures with wellhyphen;defined optically smooth mirrorlike edges has been achieved with a Sihyphen;mask shadowing technique for molecular beam epitaxy. Single and multilayer stripehyphen;mesa waveguides with widths as narrow as 1 mgr;m, twohyphen;dimensional waveguide tapers, and various other epilayer patterns have been fabricated using singlehyphen;level or multilevel masking. This technique has potential for use in the realization of integrated optoelectronic circuits in the GaAs/AlxGa1minus;xAs system.