Effects of growth rate on lateral compositional modulation of InGaAsP/InP(001) grown by metalorganic molecular beam epitaxy

摘要

Tow sets of In{sub}(1-x)Ga{sub}xAs{sub}0.85P{sub}0.15 (0.35≤x≤0.45) epitaxial layers have been grown on InP(001) substrates with a composition lying within a miscibility gap, using metalorganic molecular beam epitaxy(MOMBE) AT GROWTH RATE OF 0.25 AND 0.46 NM/S, respectively. A double crystal x-ray diffraction is mainly used to characterize structural; propertied of lateral compositional(LCM). Asymmetric (224) rocking scans show that the wavelength of the LCM is of the approximately 100nm and that the amplitude of the LCM for 0.46nm/s samples are smaller than those for 0.25 nm/s ones in the entire composition range. Cross-sectional transmission electron microscopy and photoluminescence measurements are also performed for the same samples. These investigation reveal that increasing the growth rate reduces the LCM