Photoactivated birefringence in antiferroelectric thin films via a structural transition

摘要

A photoactivated birefringence has been observed in an antiferroelectric lead zirconate titanate (PZT) thin film material bounded by an indiumhyphen;tin oxide (ITO) electrode. This phenomenon stemmed from the ultraviolet (UV) assistance to an antiferroelectrichyphen;tohyphen;ferroelectric structural transition which otherwise was inhibited by an effect of the lead zirconate titanate (PZT)hyphen;ITO interface. The UVhyphen;assisted structural transition was accompanied by a significant change in the birefringence of the PZT thin films. Using this phenomenon, an UVhyphen;addressed visiblehyphen;light modulation was demonstrated with an ITO/PZT/Pt thin film structure on silicon substrates. copy;1994 American Institute of Physics.