Pure and doped CeO{sub}2 thin films prepared by MOCVD process

摘要

Using metalβ-diketonate precursors, pure CeO{sub}2 and yttria doped CeO{sub}2 thin films were prepared on different substrates by MOCVD process. The thin films were polycrystalline in the thickness about 2 μm, having the fcc fluorite structure.The sizes of crystallite estimated from XRD patterns using Scherrer equation were in the range of 50-80 nm. The Ce/Y ratio in the doped CeO{sub}2 thin films was 3.3:1, very close to that in the solid mixed precursor. XPS studies revealed that no carbonimpurity is incorporated into the thin films. As-prepared doped CeO{sub}2 layers on porous support were promising material for electrolyte and electrode in many electrochemistry process.