Preparation of highly photosensitive hydrogenated amorphous Sihyphen;Ge alloys using a triode plasma reactor

摘要

Highly photoconductive hydrogenated amorphous Sihyphen;Ge alloys have been prepared from a SiH4/GeH4gas mixture using a triode glowhyphen;discharge reactor. High photoconductivity (Dgr;sgr;pbartil;10minus;4thinsp;OHgr;minus;1thinsp;cmminus;1) under the AM1 (100 mW/cm2) illumination and low dark conductivity (sgr;d=10minus;8ndash;10minus;9thinsp;OHgr;minus;1thinsp;cmminus;1) have been obtained for the optical gap in the range between 1.5 and 1.7 eV.