LASER RECOMBINATION TRANSITION INphyphen;TYPE GaAs

摘要

Data are presented (77deg;K) showing that laser transitions to either the valence band edge or to the acceptor,or both, are possible in a specific impurity concentration range (2 times; 1017minus;1018sol;cm3) in GaAs:Zn and GaAs:Cd. These data are observed on a lowhyphen;loss crystal structure that is pumped uniformly.