A thin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) hole transport layer enhances the AMI.5 power conversion efficiency of a PbSe quantum dot (QD)-containing photovoltaic device to 2.4, from 1.5 for a standard PbSe QD device, a relative increase of 60. Synchrotron X-ray reflectivity measurements reveal that the roughness of the interfaces between the various layers decreases dramatically in the presence of the PEDOT:PSS layer. In addition, the device life time under continuous simulated AMI.5 irradiation (100 mW cm~2), measured in terms of the time required to reach 80 of the normalized efficiency, for the PbSe QD device incorporating the PEDOT:PSS hole transport layer is six times longer than that of the standard PbSe QD device.
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