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Electron and hole traps in ZnSUB0.25/SUBCdSUB0.75/SUBSe mixed crystals

机译:Electron and hole traps in ZnSUB0.25/SUBCdSUB0.75/SUBSe mixed crystals

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摘要

Deep level defects in Zn0.25Cd0.75Se mixed crystals, grown from the vapour phase, were investigated by a variety of space charge techniques. A total of five deep levels have been observed, two with activation energies of 0.54 and 1.04 eV with respect to the conduction band and three with activation energies of 0.2, 0.55 and 0.85 eV relative to the valence band. Crystal structure and composition were determined by X-ray diffraction, EDAX and atomic absorption spectroscopy.

著录项

  • 来源
    《semiconductor science and technology》 |1986年第3期|213-217|共页
  • 作者单位

    Dept. of Appl. Phys., Durham Univ., UK;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
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  • 入库时间 2024-01-25 20:04:23
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