Heterojunction fieldhyphen;effect transistors based on AlGaSb/InAs

摘要

We have fabricated the first InAshyphen;channel fieldhyphen;effect transistor, which shows a transconductance of 180 mS/mm at 1 V drainhyphen;source bias (77 K). An improved buffer layer could significantly improve the device performance. In addition, we propose a new brokenhyphen;gap heterojunction fieldhyphen;effect transistor based on these materials that could provide an order of magnitude higher transconductance compared to existing device configurations based on AlGaAs/GaAs.