LPE In1minus;xGaxP1minus;zAsz(xsim;0.12,zsim;0.26) DH laser with multiple thinhyphen;layer (500 Aring;) active region

摘要

A liquidhyphen;phasehyphen;epitaxial (LPE) doublehyphen;heterojunction (DH) laser structure with an sim;1hyphen;mgr;m rsquo;rsquo;active regionrsquo;rsquo; consisting of gsim;20 In1minus;xGaxP1minus;zAszand InP latticehyphen;matched thin layers is described. The thinhyphen;layer dimensions are small enough (500 Aring;) to make quantum size effects relevant.