ELECTROLESS DEPOSITION OF GOLD ONTO HYDROGEN TERMINATED n-Si(111) ELECTRODE

摘要

Electroless deposition of gold on hydrogen terminated Si(111) electrode has been investigated in 0.1 M H_2SO_4 solution containing 0.5 mM of AuCl_4 ions by using attenuated total reflection Fourier transform infra-red (ATR FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS). Gold deposits on Si(111) surface without the influence on any external potential i.e., at Open Circuit Potential (OCP). It is interpreted that gold deposition takes place via hole injection into the valence band (VB). The formation of gold film and oxide layers on H-Si(111) surface proceeds simultaneously.