Strain and relaxation in InAs and InGaAs films grown on GaAs(001)

摘要

The strain and relaxation of InAs and InGaAs films grown on GaAs(001) have been examined by the xhyphen;ray standing wave and extended xhyphen;ray absorption finehyphen;structure techniques. While 1 monolayer (ML) films of both InAs and InGaAs are found to be tetragonally distorted in accordance with the prediction of macroscopichyphen;elastic theory, thicker InAs films are found to collapse to their naturalhyphen;lattice constant past a critical thicknessTc, of sim;2 MLrsquo;s. By 8 MLrsquo;s, bondhyphen;length strain is no longer evident, and a large degree of structural disorder is observed. copy;1996 American Institute of Physics.