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A simple method to synthesize graphene at 633 K by dechlorination of hexachlorobenzene on Cu foils

机译:一种通过在铜箔上脱氯六氯苯在633 K下合成石墨烯的简单方法

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摘要

A modified chemical vapor deposition method to synthesize graphene at 360 °C is described. Hexachlorobenzene (HCB) was used as carbon source, and copper foils were used as not only the substrates for graphene deposition but also the catalyst to HCB dechlorination. The possible growth mechanism was investigated using X-ray photoelectron spectroscopy. Enhancement of HCB dechlorination by copper played a key role in synthesis of graphene at such a low temperature.
机译:描述了一种在360°C下合成石墨烯的改进化学气相沉积方法。六氯苯(HCB)被用作碳源,铜箔不仅被用作石墨烯沉积的基材,还被用作HCB脱氯的催化剂。利用X射线光电子能谱研究了可能的生长机理。铜对六氯代苯脱氯的增强在如此低温下合成石墨烯中起着关键作用。

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