Influence of scan speed on deep level defects in cw laser annealed silicon

摘要

Deep level transient spectroscopy has been used to study the influence of the beam scan speed on quenchedhyphen;in defects in cw laser processed virgin silicon. It is shown that the averaged defect concentration decreases by almost two orders of magnitude as the scan speed is increased from 1 to 100 cm/s for a fixed temperature distribution in the material. Implications regarding technological applications of cw laser processing are briefly discussed.