Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy

摘要

A cubic GaN/AlGaN heterostructure has been grown on a GaAs (100) substrate by metalorganic vapor-phase epitaxy under low V/III ratio conditions, which resulted in a flat GaN layer. Stimulated emission was observed at 387 nm from the cleaved edge of an optically pumped cubic GaN/AlGaN heterostructure at 34 K. The threshold power density was 2.4MW/cm(2). (C) 1997 American Institute of Physics.