机译:Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel
Inter-university Semiconductor Re-search Center and Department of Electrical Engineering, Seoul Na-tional University, Seoul 151-744, Republic of Korea,Process Integration Team (S. LSI), Semi-conductor Business Group, Samsung Electronics Co. Ltd., Yongin 4;
Inter-university Semiconductor Re-search Center and Department of Electrical Engineering, Seoul Na-tional University, Seoul 151-744, Republic of Korea;
TFET; compatibility to CMOS technology flow; sigma-shape embedded SiGe source; recessed channel;