Thin film Nb3Ge dchyphen;SQUID with high operating temperature

摘要

Small area planar Nb3Ge dchyphen;SQUIDs with wide operating temperature range were obtained using thin (40 nm) Nb3Ge films with high transition temperatureTcand small critical current per unit length. The SQUIDS were fabricated using electron beam lithography and reactive ion etching. SQUID operation was observed in the temperature range from 10 to 18.4 K with a best modulation depth of 11percnt;.