The spatial location of the intermediate new phase precipitate layer during SOI structure fabrication

摘要

It is likely that during the substoichiometric ion beam synthesis of SOI structures the intermediate new phase precipitate layer known as the 'hump' is formed. It has been shown that the depth location of the 'hump' is correlated with the average size of the new phase nuclei in the growing insulating layer. After postimplantation annealing the 'hump' is localized closer to the sample surface given the average size of the nuclei is decreased. The conditions for which the forming SOI structure has no 'hump' have been established.