Nondestructive local analysis of currentvoltage characteristics of solar cells by lock-in thermography

摘要

By evaluating dark lock-in thermography images taken at one reverse and three forward biases, images of all two-diode-parameters J_(01), J _(02), n (ideality factor of J_(02)), and G_p (the parallel Ohmic conductivity) of the dark currentvoltage characteristic are obtained. A local series resistance is explicitly considered and may be provided as a series resistance image, e.g. resulting from luminescence imaging. The results enable a separate investigation of factors influencing the depletion region recombination current and the diffusion current, which is governed by the bulk lifetime. Local IV characteristics of special sites may be simulated.