Trap Density Measurements in Hydrogenated Amorphous Silicon Thin Film Prepared by Glow Discharge Technique

摘要

The present report relates to the investigation of the density of states in the hydrogenated amorphous silicon (a-Si:H) film by SCLC (Space charge limited current) technique. It has been observed that the film deposition conditions can be optimized after careful study of the a-Si:H film by SCLC technique.