The electrical compensation induced by oxygen ion implants in Be dopedphyphen;type In0.52Al0.48As epilayers has been investigated. By performing hot implants (sim;250thinsp;deg;C) and high temperature (as high as 800thinsp;deg;C) furnace anneals, we have ascertained the formation of thermally stable electrically compensated layers. Similar data obtained by varying oxygen implant dose and Be background doping level are permitted to confirm unambiguously the involvement of oxygen atoms in the compensation mechanism. These results are satisfactorily explained assuming the formation of a deep donor center involving the participation of oxygen atoms.
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