Radiation-induced damage and annealing effect in CuInSe{sub}2 thin films

摘要

High energty proton and electron irradiation damage and annealing effects in CuInSe{sub}2 thin film were investigated. Single Crystal and Polycrystalline CuInSe{sub}2 thin films were grown on semi-insulating GaAs (001) and quartz substrates by RE sputtering. Electrical properties of irradiated films were characterized by van der Pauw method. Decrease of carrier concentration was seen in both electron- and proton-irradiated samples. In proton-irradiated samples with large acceleration energy, carrier removal rate becomes small. In order to investigate recovery of the defects, annealing of CuInSe{sub}2 films was performed. As a result, increase of carrier concentration was seen in irradiated CuInSe{sub}2 films.