We verified a critical condition that short channel effects depend on junction depth, and showed that junction depth by itself is not important for improving short channel immunity. The depletion region width of a short channel device changes significantly depending on the location along the channel. We proposed a universal channel depletion width parameter that effectively expresses this dependence. Using this parameter, we solved a two-dimensional potential distribution and derived a threshold voltage model. Our model reproduces the numerical data of sub-0.1-μm gate length devices, including channel doping concentration, gate oxide thickness, drain voltage, and hack bias dependencies.
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